Monte Carlo Simulation on the Novel M-THGEM Detector

Compared to THGEM (Thick Gas Electron Multiplier), the novel Multilayer Thick Gaseous Electron Multiplier (M-THGEM) has many advantages, such as continuous avalanche zone, more compact structure, high gain at low pressure and low operating voltage, and easy to make large-area production. In the presented work, two types of the M-THGEM detector (two or three layers) were modeled, and their main principle and performances were also studied by simulation. Two types of the detector were molded and simulated by using the finite element software (ANSYS), and the electric field distribution and nodes information lists were figured out. The effective gain and induced signal from M-THGEM detector at different gas pressures and operating voltages were studied with the Garfield++ package. The simulation results shown that M-THGEM can obtain a stable higher gain around 10⁵ in an environment where has a low pressure even in 200 Torr and within a pure inertia gas such as He. At this condition, the width of the induced signal from the three-layers structure is around 120 ns. Additionally, an asymmetric way of the applied voltage was studied and aim to reduce the efficiency of ion feedback, and our results show that this method is effective.