Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions

Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm² at the linear energy transfer (LET) of 99.0 MeV·cm²/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.