Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions
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Graphical Abstract
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Abstract
Abstract：Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x1014 cm-2 and 55 keV H ions at a fluence of 1x1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
be attributed to the role of both B and B implanted induced vacancy-type defects.
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