Test of Double-sided Multistrip Silicon Detectors
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Graphical Abstract
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Abstract
The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.
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