Studies of Slow Highlycharged Ion Irradiated C<SUB>60</SUB> Films

FU Yun-chong; YAO Cun-feng; JIN Yun-fan

doi:10.11804/NuclPhysRev.27.02.223

FU Yun-chong, YAO Cun-feng, JIN Yun-fan. Studies of Slow Highlycharged Ion Irradiated C60 Films[J]. Nuclear Physics Review, 2010, 27(2): 223-227. DOI: 10.11804/NuclPhysRev.27.02.223

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FU Yun-chong, YAO Cun-feng, JIN Yun-fan. Studies of Slow Highlycharged Ion Irradiated C60 Films[J]. Nuclear Physics Review, 2010, 27(2): 223-227. DOI: 10.11804/NuclPhysRev.27.02.223

Citation:

FU Yun-chong, YAO Cun-feng, JIN Yun-fan. Studies of Slow Highlycharged Ion Irradiated C60 Films[J]. Nuclear Physics Review, 2010, 27(2): 223-227. DOI: 10.11804/NuclPhysRev.27.02.223

Studies of Slow Highlycharged Ion Irradiated C₆₀ Films

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In order to investigate the potential effect in the C60 films induced by slow highlycharged ion(SHCI), the irradiation experiments of C₆₀ films were performed by using Xen+ ions(n=3, 10, 13, 15, 17, 20, 22, 23). The irradiated C₆₀ films were analyzed by means of AFM and Raman scattering. The analysis results indicated that the surface roughness of C60 films irradiated is decreasing with the increase of the charge state of Xen+ ions(potential energy stored in Xen+ ions).This reveals the existing of the potential effect. The results of the Raman spectra showed that in despite of existing influence of potential effect, the damage process of C₆₀ films in the area for analysis depth of Raman is dominated by the elastic collisions, because the deposited potential energy of Xen+ ion in C₆₀ films is much less than its kinetic energy.

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Studies of Slow Highlycharged Ion Irradiated C60 Films

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Studies of Slow Highlycharged Ion Irradiated C₆₀ Films