Photoluminescence of Lowenergy Co Ions Implanted Crystal ZnO
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Graphical Abstract
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Abstract
In this paper， ion implantation techniques were used to study the photoluminescence(PL) of the Coimplanted crystal ZnO. After Coion implanted， the samples were annealed at 700 ℃ for 10 min in Ar gas flow. It was observed violet emission peak of 406 and 370 nm in the PL spectrum. The PL spectra of the ZnO crystal samples which were implanted by Co ions and Cu ions， respectively, have been compared and observed that the PL spectrum of the Coimplanted ZnO is similar to that of the Cuimplanted ZnO. We studied the influence of implantation dose on the PL of the Coimplanted ZnO and found that the green luminescence centre shifted with increasing of implantation dose. It is concluded that the shift of the green luminescence centre is related to the change of ZnO band gap which was caused by ion implantation.
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