Advanced Search
ZHAO Zi-qiang. Implantation Study of Silicon Cluster Ions Sin+(n=1-3)Into Si Crystal[J]. Nuclear Physics Review, 2002, 19(Suppl): 98-101. DOI: 10.11804/NuclPhysRev.19.S1.098
Citation: ZHAO Zi-qiang. Implantation Study of Silicon Cluster Ions Sin+(n=1-3)Into Si Crystal[J]. Nuclear Physics Review, 2002, 19(Suppl): 98-101. DOI: 10.11804/NuclPhysRev.19.S1.098
shu

Implantation Study of Silicon Cluster Ions Sin+(n=1-3)Into Si Crystal

    Graphical Abstract
    • Abstract
  • In the case of Si + n (n=1-3) with energy of 0. 6 MeV/ion implantation into Si crystal, the mono-and bi-vacancies are formed i n the crystal. The optical absorption indicated that the defects, V 20 stat e, caused by cluster ions variy with the size of cluster. That is "Cluster Effe ct". Cluster zone and effect can be deduced by TRIM program and the experiment of positive electron annihilation.
    • FullText(HTML)
  • loading
    • References (0)
    • Related Articles

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return