Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods

LIU Chang-long

doi:10.11804/NuclPhysRev.18.03.164

LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. DOI: 10.11804/NuclPhysRev.18.03.164

Citation:

LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. DOI: 10.11804/NuclPhysRev.18.03.164

Citation:

LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. DOI: 10.11804/NuclPhysRev.18.03.164

Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods

LIU Chang-long

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The transient enhanced diffusion in crystalline silicon implanted with dopants and followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed.

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Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods

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