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Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. DOI: 10.11804/NuclPhysRev.15.03.166
Citation: Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. DOI: 10.11804/NuclPhysRev.15.03.166
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Study of Quantum Optoelectronic Material Prepared by Ion Implantation

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  • The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed.
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