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LI Guo-hui, JI Cheng-zhou, LIU Yi-li, LUO Yan, HAN De-jun. Ion Implantation in GaAs[J]. Nuclear Physics Review, 1997, 14(3): 177-180. DOI: 10.11804/NuclPhysRev.14.03.177
Citation: LI Guo-hui, JI Cheng-zhou, LIU Yi-li, LUO Yan, HAN De-jun. Ion Implantation in GaAs[J]. Nuclear Physics Review, 1997, 14(3): 177-180. DOI: 10.11804/NuclPhysRev.14.03.177
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Ion Implantation in GaAs

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  • Optical and electrical properties of Si GaAs wafers implanted with Si+, S+, Be+, Mg+, B+, O+ have been investigated in this paper.
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