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Wang Zhu-sheng, Chao Zhi-yuan, Xu Jin-lan. Development of Superthin Epitaxial Silicon Detectors[J]. Nuclear Physics Review, 1995, 12(3): 55-57. DOI: 10.11804/NuclPhysRev.12.03.055
Citation:
Wang Zhu-sheng, Chao Zhi-yuan, Xu Jin-lan. Development of Superthin Epitaxial Silicon Detectors[J]. Nuclear Physics Review, 1995, 12(3): 55-57. DOI: 10.11804/NuclPhysRev.12.03.055
Wang Zhu-sheng, Chao Zhi-yuan, Xu Jin-lan. Development of Superthin Epitaxial Silicon Detectors[J]. Nuclear Physics Review, 1995, 12(3): 55-57. DOI: 10.11804/NuclPhysRev.12.03.055
Citation:
Wang Zhu-sheng, Chao Zhi-yuan, Xu Jin-lan. Development of Superthin Epitaxial Silicon Detectors[J]. Nuclear Physics Review, 1995, 12(3): 55-57. DOI: 10.11804/NuclPhysRev.12.03.055
Development of Superthin Epitaxial Silicon Detectors
Wang Zhu-sheng
,
Chao Zhi-yuan
,
Xu Jin-lan
Graphical Abstract
Graphical Abstract
Abstract
Abstract
The epitaxial st-dE/dX surface barrier detectors with an active area of 28~154mm2 and thickness of 5. 2~10μm have been developed. This kind of detector can be used for measuring α-particle, proton with low energy and for distinguishing particles...
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