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Hang De-sheng. An Application of 12MeV Electron Irradiation in Semiconductor Devices[J]. Nuclear Physics Review, 1995, 12(2): 67-68. DOI: 10.11804/NuclPhysRev.12.02.067
Citation: Hang De-sheng. An Application of 12MeV Electron Irradiation in Semiconductor Devices[J]. Nuclear Physics Review, 1995, 12(2): 67-68. DOI: 10.11804/NuclPhysRev.12.02.067
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An Application of 12MeV Electron Irradiation in Semiconductor Devices

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  • This article gives complete introduction to the principles, method and traits of the technology of the high-energy 12MeV electron irradiation. It also describes a successful application in fast diode, switch transistor and fast SCR.
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